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| Small Area Silicon Avalanche Photodiode SD 012-70-62-541 PACKAGE DIMENSIONS INCH / mm PACKAGE DIMENSIONS INCH / mm TO-5 PACKAGE TO-46 PACKAGE CHIP DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] FEATURES * * * * Low noise Small size High Speed Low cost DESCRIPTION The SD 012-70-62-541 is a 0.3 mm diameter small area silicon avalanche photodiode (APD) that provides high gain and low noise, packaged in a hermetic TO-46 metal can with a flat window. 80 70 Responsivity (A/W) APPLICATIONS * Military * Industrial * Medical ABSOLUTE MAXIMUM RATING (TA)= 23C UNLESS OTHERWISE NOTED SYMBOL VBR TSTG TO TS PARAMETER Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* MIN 130 -40 -40 MAX 280 +85 +55 +240 UNITS V C C C 60 50 40 30 20 10 0 400 SPECTRAL RESPONSE M = 100 SPECTRAL RESPONSE 80 70 60 50 40 30 R 450 500 550 600 650 700 750 800 850 QE 1000 1050 1100 900 950 20 10 0 * 1/16 inch from case for 3 seconds max. Wavelength (nm) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23C and gain of 100 at 820nm UNLESS OTHERWISE NOTED SYMBOL ID CJ IN lrange R Vop tr CHARACTERISTIC TEST CONDITIONS MIN TYP 2 0.12 400 30 47 130 0 .7 280 1 1100 MAX 10 2.5 UNITS nA pF pA/Hz nm A/W V nS Dark Current Junction Capacitance f = 1 MHz Noise Current Spectral Density f = 100 kHz Spectral Application Range Spot Scan l= 660nm, VR = 0 V Responsivity l= 830nm, VR = 0 V Operating voltage RL = 50 , l= 675nm Response Time** **Response time of 10% to 90% is specified at 820nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. (TA)= 23C and Gain = 100 at 830nm UNLESS OTHERWISE ELECTRO-OPTICAL CHARACTERISTICS RATING SYMBOL CHARACTERISTIC TEST CONDITIONS TYP MAX UNITS Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 * Phone (805) 987-0146 * Fax (805)MIN 484-9935 * www.advancedphotonix.com REV 8/22/06 |
Price & Availability of SD012-70-62-541
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